Method for manufacturing semiconductor device capable of increasing current drivability of pmos transistor

ABSTRACT

A semiconductor device capable of selectively applying different stresses for increasing current drivability of PMOS transistor is made by defining trenches in a semiconductor substrate having a PMOS region; forming selectively a buffer layer on sidewalls of the trenches; forming an insulation layer to fill the trenches; annealing the semiconductor substrate such that compressive stress is applied in a channel length direction of a PMOS transistor by oxidizing the buffer layer; removing portions of the insulation layer and thereby forming an isolation layer; and forming the PMOS transistor on the PMOS region of the semiconductor substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to Korean patent application number 10-2007-0108428 filed on Oct. 26, 2007, which is incorporated herein by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a semiconductor device, which can increase the current drivability of a PMOS transistor.

As the high integration of a semiconductor device proceeds, the length of the channel of a transistor decreases, and the doping concentrations of a source area and a drain area increase. Due to this fact, a charge sharing phenomenon between the source area and the drain area increasingly occurs, and controllability of gates degrades, so that a short channel effect, in which a threshold voltage abruptly decreases, results as a serious problem. Also, as the DIBL (drain-induced barrier lowering) characteristic and the current drivability of a transistor are deteriorated by the short channel effect, the operation speed of a semiconductor device decreases. Thus, a semiconductor device having the conventional planar channel structure necessarily has limitations in overcoming the various problems caused by the high integration of a semiconductor device, such as a short channel effect, the deterioration of an operation speed, and so on.

Under this situation, research has actively been conducted in order to enlarge a channel region. As a result of the research, a recess gate for increasing an effective channel length and a fin gate for increasing an effective channel width have been disclosed in the art.

Meanwhile, in an effort to increase the current drivability of a transistor, research has been conducted for a method for decreasing the thickness of a gate insulation layer or the depth of a junction area or an SSR (super-steep retrograde) method. Also, in order to increase the current drivability of a transistor, a method for applying stress to a semiconductor substrate has been researched.

Here, the directions of stresses, which must be applied to a semiconductor substrate to increase the current drivability of a transistor, vary depending upon the kind of the transistor. Hereafter, the directions of stresses, which must be applied depending upon the kind of a transistor to increase the current drivability of the transistor, will be described with reference to FIG. 1 and Table 1.

TABLE 1 NMOS PMOS X direction tensile stress compressive stress Y direction tensile stress tensile stress Z direction compressive stress tensile stress

Referring to FIG. 1, a gate 110 is formed on a semiconductor substrate 100, and source and drain areas 120 are respectively formed in the semiconductor substrate 100 on both sides of the gate 110, by which a transistor is formed. The channel length direction of the transistor corresponds to the X direction, the channel width direction of the transistor corresponds to the Y direction, and the height direction of the gate 110 corresponds to the Z direction.

Referring to Table 1, in the case of an NMOS transistor, when tensile stresses are applied in the X direction and the Y direction and compressive stress is applied in the Z direction, the current drivability and an operation speed can be increased. In the case of a PMOS transistor, when compressive stress is applied in the X direction and tensile stresses are applied in the Y direction and the Z direction, the current drivability and an operation speed can be increased.

For example, the NMOS transistor can be realized by sequentially forming a SiGe layer and a Si layer on a semiconductor substrate made of bulk silicon through epitaxial growth and then forming NMOS gates on the Si layer. In this case, since the Si layer is formed on the SiGe layer having a large distance between lattices, the distance between lattices in the Si layer increases, and according to this, tensile stresses can be applied in both the channel length direction and the channel width direction of the NMOS transistor, that is, the X direction and the Y direction. Hence, the current drivability and the operation speed of the NMOS transistor can be increased.

In the conventional art, the same kind of stresses, that is, tensile stresses are applied in the channel length direction and the channel width direction of the NMOS transistor, that is, the X direction and the Y direction. However, in the case of the PMOS transistor in which different kinds of stresses must be applied in the X direction and the Y direction to increase the current drivability, the current drivability cannot be properly increased through the method of applying stresses to the semiconductor substrate as in the case of the NMOS transistor. That is to say, in the case of the PMOS transistor, since compressive stress must be applied in the X direction and tensile stress must be applied in the Y direction to increase the current drivability, the method of applying the tensile stresses in both the X direction and the Y direction cannot be used.

SUMMARY OF THE INVENTION

Embodiments of the present invention are directed to a method for manufacturing a semiconductor device which can increase the current drivability of a PMOS transistor.

Also, embodiments of the present invention are directed to a method for manufacturing a semiconductor device which can increase the current drivability of a PMOS transistor, thereby improving the operation characteristics of a semiconductor device.

In one aspect, a method for manufacturing a semiconductor device comprises the steps of forming an isolation layer having a structure in which an insulation layer is filled in trenches defined in a semiconductor substrate having a PMOS region; and growing sequentially an SiGe layer and an Si layer on the PMOS region of the semiconductor substrate through an epitaxial growing process such that tensile stress is applied in a channel width direction of a PMOS transistor, wherein, when forming the isolation layer, after selectively forming a buffer layer on sidewalls of the trenches, the buffer layer is oxidated such that compressive stress is applied in a channel length direction of the PMOS transistor.

The buffer layer is formed as a layer made of any one of Si, Ge, Al, Zr, Hf and B. Preferably, the buffer layer is formed as a Si layer.

The buffer layer is formed as a layer containing at least one of Si, Ge, Al, Zr, Hf and B.

The buffer layer is formed as an oxide layer in which at least one of Si, Ge, Al, Zr, Hf and B is oxidated to an oxygen lacking state.

Oxidation of the buffer layer is conducted at a temperature of 700˜1,000° C. under a pressure of 200˜760 Torr.

In another aspect, a method for manufacturing a semiconductor device comprises the steps of defining trenches in a semiconductor substrate having a PMOS region; forming selectively a buffer layer on sidewalls of the trenches; forming an insulation layer to fill the trenches which have the buffer layer formed on the sidewalls thereof; annealing the semiconductor substrate formed with the insulation layer such that compressive stress is applied in a channel length direction of a PMOS transistor by oxidating the buffer layer; removing portions of the insulation layer and thereby forming an isolation layer; growing sequentially an SiGe layer and an Si layer on the PMOS region of the semiconductor substrate formed with the isolation layer through an epitaxial growing process such that tensile stress is applied in a channel width direction of the PMOS transistor; and forming the PMOS transistor on the PMOS region of the semiconductor substrate.

After the step of defining the trenches and before the step of forming the buffer layer, the method further comprises the steps of forming a sidewall oxide on surfaces of the trenches; and forming a linear nitride layer on the semiconductor substrate including the sidewall oxide.

After the step of forming the linear nitride layer, the method further comprises the step of forming a linear oxide layer on the linear nitride layer.

The buffer layer is formed as a layer made of any one of Si, Ge, Al, Zr, Hf and B. Preferably, the buffer layer is formed as a Si layer.

The buffer layer is formed as a layer containing at least one of Si, Ge, Al, Zr, Hf and B.

The buffer layer is formed as an oxide layer in which at least one of Si, Ge, Al, Zr, Hf and B is oxidated to an oxygen lacking state.

The step of forming selectively the buffer layer on the sidewalls of the trenches comprises the steps of depositing a buffer layer on the semiconductor substrate including the surfaces of the trenches; and etching the buffer layer such that the buffer layer remains only on sidewalls of the trenches.

The insulation layer comprises an oxide layer which is formed through an HDP process or an SOD process.

Annealing is conducted at a temperature of 700˜1,000° C. under a pressure of 200˜760 Torr.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view and a sectional view for explaining a conventional transistor.

embodiment of the present invention.

FIGS. 4A through 4H are cross-sectional views taken along the line B-B′ of FIG. 2, illustrating the processes of the method for manufacturing a semiconductor device in accordance with an embodiment of the present invention.

DESCRIPTION OF SPECIFIC EMBODIMENT

In the present invention, a buffer layer is formed on the sidewalls of trenches defined in the PMOS region of a semiconductor substrate made of bulk silicon. The buffer layer may comprise a silicon layer. An isolation structure is formed by filling the trenches, which have the buffer layer formed on the sidewalls thereof, with an insulation layer. Then, the buffer layer is oxidized. Thereafter, a PMOS transistor including a gate and source and drain regions are formed in the PMOS region of the semiconductor substrate.

As the buffer layer is oxidized, the volume of the buffer layer increases. Due to this increase in the volume of the buffer layer, the silicon lattices in the semiconductor substrate are pushed, or compressed, such that the distance between the silicon lattices decreases. As a result, compressive stress is selectively applied only in the channel length direction in the PMOS region of the semiconductor substrate.

Therefore, in the present invention, different stresses can be applied in the channel length direction and the channel width direction in the PMOS transistor, because a method of selectively applying compressive stress only in the channel length direction is used in addition to the conventional method of applying stress to a semiconductor substrate. By applying different stresses in the channel length direction and the channel width direction in the PMOS transistor, the current drivability of the PMOS transistor can be effectively increased, and the operation characteristics of a semiconductor device can be improved.

Hereafter, a specific embodiment of the present invention will be described in detail with reference to the attached drawings.

FIG. 2 is a plan view for explaining a method for manufacturing a semiconductor device in accordance with an embodiment of the present invention, and FIGS. 3A through 3H and 4A through 4H are sectional views taken along the respective lines A-A′ and B-B′ of FIG. 2, illustrating the processes of the method for manufacturing a semiconductor device in accordance with the embodiment of the present invention. FIG. 2 shows an active region 210, an isolation structure 220, a gate 230, and source and drain regions 240. As shown in FIG. 2, the channel length direction of a transistor is denoted as the X direction, and the channel width direction of the transistor is denoted as the Y direction.

Referring to FIGS. 3A and 4A, after forming a pad oxide layer 302 and a pad nitride layer 304 on a semiconductor substrate 300 having a PMOS region, a hard mask 306 is formed by patterning the pad nitride layer 304 and the pad oxide layer 302. Trenches T for forming an isolation structure are defined by etching the semiconductor substrate 300 using the hard mask 306 as an etch mask.

Referring to FIGS. 3B and 4B, a sidewall oxide 308 is formed on the sidewalls of the trenches T through a thermal oxidation process. A liner nitride layer 310 is formed on both the sidewall oxide 308 and the hard mask 306. Thereafter, while not shown in the drawings, a liner oxide layer can be formed on the liner nitride layer 310.

Referring to FIGS. 3C and 4C, a buffer layer 312 is formed on the resultant semiconductor substrate 300, which is formed with the liner nitride layer 310. The buffer layer 312 is formed as a layer made of any one of Si, Ge, Al, Zr, Hf, and B, preferably a Si layer. Also, the buffer layer 312 can be formed as a layer containing at least one of Si, Ge, Al, Zr, Hf, and B, that is, an oxide layer in which at least one of Si, Ge, Al, Zr, Hf, and B is oxidized to an oxygen lacking state. Portions of the buffer layer 312 formed on the bottom surfaces of the trenches T and over the active region of the semiconductor substrate 300 are removed, such that the buffer layer 312 remains only on the sidewalls of the trenches T, that is, the sidewalls of the active region in the X direction of FIG. 2.

Referring to FIGS. 3D and 4D, an insulation layer 314 is formed on the resultant semiconductor substrate 300 to fill the trenches T which have the buffer layer 312 formed on the sidewalls thereof. The insulation layer 314 is formed as an oxide layer, for example, through at least one selected form group consisting of a high density plasma (HDP) process and a spin-on dielectric (SOD) process.

Referring to FIGS. 3E and 4E, the resultant semiconductor substrate 300, which is deposited with the insulation layer 314, is annealed, and through this annealing, the buffer layer 312 is oxidized. The reference numeral 312 a designates the oxidized buffer layer. Annealing is conducted at a temperature of 700˜1,000° C. under a pressure of 200˜760 Torr. Through the annealing, the insulation layer 314 is baked or densified.

When the buffer layer 312 is oxidized through the annealing, the volume of the oxidized buffer layer 312 a increases to substantially one and a half times the volume of the buffer layer 312. Due to the increase in the volume of the oxidized buffer layer 312 a, the silicon lattices in the semiconductor substrate 300 are pushed or compressed, decreasing and the distance between the silicon lattices. As a result of the volume increase of the oxidized buffer layer 312 a, compressive stress is selectively applied to the portions of the semiconductor substrate 300 on which the oxidized buffer layer 312 a is formed. The compressive stress is applied to the portions of the semiconductor substrate 300, to which correspond to the channel length direction (that is, the X direction of FIG. 2) of the PMOS transistor which will be subsequently formed.

Referring to FIGS. 3F and 4F, the insulation layer 314 is removed until the hard mask 306 is exposed. The removal of the insulation layer 314 is conducted through a chemical mechanical polishing (CMP) process or an etch-back process. The exposed hard mask 306 is removed forming an isolation structure 320 for delimiting the active region in the PMOS region of the semiconductor substrate 300.

Referring to FIGS. 3G and 4G, tensile stress is applied to the active region of the PMOS region in the channel width direction (the Y direction of FIG. 2) of the PMOS transistor which will be subsequently formed. In the present invention, a method of sequentially growing a SiGe layer 322 and a Si layer 324 on the semiconductor substrate 300 through epitaxial growth is employed to apply tensile stress in the channel width direction of the PMOS transistor. In this case, the Si layer 324 is formed on the SiGe layer 322, and therefore the distance between the lattices of the Si layer 324 can be increased because the distance between lattices is greater in the SiGe layer 322 than the Si layer 324. Due to the increase in distance between the lattices of the Si layer 324, it is possible to apply tensile stress in the channel width direction of the PMOS transistor.

A gate 330 is formed on the active region of the PMOS region to which tensile stress is applied in the channel width direction. The gate 330 includes a gate insulation layer 332, a gate conductive layer 334, and a gate hard mask layer 336.

Referring to FIGS. 3H and 4H, spacers 338 are formed on the sidewalls of the gate 330, and source and drain regions 340 are formed in the semiconductor substrate 300 on both sides of the gate 330 formed with the spacers 338. A PMOS transistor is formed upon formation of the source and drain regions 340.

Thereafter, while not shown in the drawings, the manufacture of a semiconductor device according to the embodiment of the present invention is completed by sequentially conducting a series of well-known subsequent processes.

As is apparent from the above description, in the present invention, after selectively forming a buffer layer on the sidewalls of the trenches defined to form an isolation structure, by oxidizing the buffer layer, it is possible to cause compressive stress to be applied in the channel length direction of a PMOS transistor. Also, in the present invention, by sequentially forming a SiGe layer and a Si layer through epitaxial growth in an active region, it is possible to cause tensile stress to be applied in the channel width direction of the PMOS transistor. Accordingly, in the present invention, since different types of stresses, that is, compressive stress and tensile stress, can be respectively applied in the channel length direction and the channel width direction of the PMOS transistor, the current drivability of the PMOS transistor can be effectively increased, whereby the operation speed and the operation characteristics of a semiconductor device can be improved.

Although a specific embodiment of the present invention has been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and the spirit of the invention as disclosed in the accompanying claims. 

1. A method for manufacturing a semiconductor device, comprising the step of forming an isolation layer having a structure in which an insulation layer is filled in trenches defined in a semiconductor substrate having a PMOS region; the step of forming the isolation layer comprising; forming a buffer layer selectively on sidewalls of the trenches; and oxidizing the buffer layer such that compressive stress is applied in a channel length direction of the PMOS transistor.
 2. The method according to claim 1, wherein the buffer layer is formed as a layer made of any one of Si, Ge, Al, Zr, Hf, and B.
 3. The method according to claim 2, wherein the buffer layer is formed as a Si layer.
 4. The method according to claim 1, wherein the buffer layer is formed as a layer containing at least one of Si, Ge, Al, Zr, Hf, and B.
 5. The method according to claim 4, wherein the buffer layer is formed as an oxide layer in which at least one of Si, Ge, Al, Zr, Hf and B is oxidized to an oxygen lacking state.
 6. The method according to claim 1, wherein oxidation of the buffer layer is conducted at a temperature of 700˜1,000° C. and at a pressure of 200˜760 Torr.
 7. A method for manufacturing a semiconductor device, comprising the steps of: defining trenches in a semiconductor substrate having a PMOS region; forming a buffer layer selectively on sidewalls of the trenches; forming an insulation layer to fill the trenches having the buffer layer formed on the sidewalls thereof; annealing the semiconductor substrate such that the buffer layer is oxidized and compressive stress is applied in a channel length direction of a PMOS transistor; removing portions of the insulation layer and thereby forming an isolation layer; and forming the PMOS transistor on the PMOS region of the semiconductor substrate.
 8. The method according to claim 7, wherein, after the step of defining the trenches and before the step of forming the buffer layer, the method further comprises the steps of: forming a sidewall oxide on surfaces of the trenches; and forming a liner nitride layer on the semiconductor substrate including the sidewall oxide.
 9. The method according to claim 8, wherein, after the step of forming the liner nitride layer, the method further comprises the step of: forming a liner oxide layer on the liner nitride layer.
 10. The method according to claim 7, wherein the buffer layer is formed as a layer made of any one of Si, Ge, Al, Zr, Hf, and B.
 11. The method according to claim 10, wherein the buffer layer is formed as a Si layer.
 12. The method according to claim 7, wherein the buffer layer is formed as a layer containing at least one of Si, Ge, Al, Zr, Hf, and B.
 13. The method according to claim 12, wherein the buffer layer is formed as an oxide layer in which at least one of Si, Ge, Al, Zr, Hf, and B is oxidized to an oxygen lacking state.
 14. The method according to claim 7, wherein the step of forming the buffer layer selectively on the sidewalls of the trenches comprises the steps of: depositing a buffer layer on the semiconductor substrate including the surfaces of the trenches; and etching the buffer layer such that the buffer layer remains only on sidewalls of the trenches.
 15. The method according to claim 14, wherein the insulation layer comprises an oxide layer formed through at least one selected from group consisting of a high density plasma (HDP) process and a spin-on dielectric (SOD) process.
 16. The method according to claim 7, wherein annealing is conducted at a temperature of 700˜1,000° C. and at a pressure of 200˜760 Torr. 